Subject: Construction of simplified single heterojunction LED structure flat energy band diagram.

 Subject: Construction of simplified single heterojunction LED structure flat energy band diagram.

• Use Anderson’s rule [1] and the model of Varshni [2] for calculating parameters needed to construct flat energy band diagram [3] for a generic InGaN/GaN single QW heterojunction LED emitting at 460 nm. Use typical values for this device donor and acceptor concentrations.
• Select metals for forming Ohmic contact to the n-type semiconductor and the p-type semiconductors.
• Provide a drawing of flat energy band diagram for designed LED structure. Include all necessary numerical values, equations, calculated parameters and references used.

References:

1. Y. Varshni, ‘Temperature Dependence of the Energy Gap in Semiconductors,” Physica, vol. 34, pp. 149-154, 1967.
2. R. L. Anderson, “Germanium-gallium arsenide heterojunction,” IBM J. Res. Dev. vol.4, Issue 3, pp. 283-287, 1960.
3. https://en.wikipedia.org/wiki/Band_diagram

I am having a lot of trouble finding typical values for the donor and acceptor concentrations for a 460 nm LED and I don’t have a good understanding of how to go about calculating conduction and valence bands for a problem like this

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